©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
152
TVS Diode Arrays (SPA
™
Family of Products)
Revision: March 20, 2012
Lightning Surge Protection - SP4040 Series
SP4040 Series
SP4040
Absolute Maximum Ratings
Parameter Rating Units
Peak Pulse Current (8/20μs) 75 A
Peak Pulse Power (8/20μs) 2100 W
IEC 61000-4-2, Direct Discharge, (Level 4) 30 kV
IEC 61000-4-2, Air Discharge, (Level 4) 30 kV
Telcordia GR 1089 (Intra-Building) (2/10μs) 100 A
ITU K.20 (5/310μs) 20 A
Electrical Characteristics (T
OP
= 25°C)
Thermal Information
Parameter Rating Units
SOIC Package 170 °C/W
Operating Temperature Range -55 to 125 °C
Storage Temperature Range -65 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)
260 °C
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Stand-Off Voltage V
RWM
I
T
≤1μA - - 3.3 V
Reverse Breakdown Voltage V
BR
I
T
= 2μA 3.3 - - V
Snap Back Voltage V
SB
I
T
= 50mA 3.3 - - V
Reverse Leakage Current I
R
V
RWM
= 3.3V - - 1 μA
Clamping Voltage, Line-Ground
1
V
C
I
PP
= 40A, t
p
=8/20 μs - - 14 V
Clamping Voltage, Line-Ground
1
V
C
I
PP
= 75A, t
p
=8/20 μs - - 20 V
Clamping Voltage, Line-Ground
1
V
C
I
PP
= 100A, t
p
=2/10 μs 20 V
Dynamic Resistance, Line-Ground
1
R
DYN
( V
C2
-V
C1
)/(I
PP2
-I
PP1
) - 0.2 -
Clamping Voltage, Line-Line
1
V
C
I
PP
= 40A, t
p
=8/20 μs - - 20 V
Clamping Voltage, Line-Line
1
V
C
I
PP
= 75A, t
p
=8/20 μs - - 30 V
Clamping Voltage, Line-Line
1
V
C
I
PP
= 100A, t
p
=2/10 μs 30 V
Dynamic Resistance, Line-Line
1
R
DYN
( V
C2
-V
C1
)/(I
PP2
-I
PP1
) - 0.3 -
Junction Capacitance
1
C
j
Line to Ground
V
R
=0V, f= 1MHz
-58pF
Line to Line, V
R
=0V, f= 1MHz - 2.5 5 pF
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
1
Parameter is guaranteed by design and/or device characterization.
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