Littelfuse SDP TwinChip Series 3x3 QFN Instrukcja Użytkownika Pobierz pdf (Strona 2)

SIDACtor

Protection Thyristors

Revised: February 22, 2011

Speciﬁcations are subject to change without notice.

Please refer to www.littelfuse.com for current information.

Broadband Optimized™ Protection

Series

TSM

2x10μs 1.2x50μs/8x20μs 10x700/5x310μs 10x1000μs 50 / 60 Hz

A min A min A min A min A min

F 100 80 37.5 30 15

Surge Ratings

Package Symbol Parameter Value Unit

3x3 QFN

Junction Temperature UP °C

STG

Storage Temperature Range UP °C

0JA

Thermal Resistance: Junction to Ambient 100 °C/W

Thermal Considerations

DRM

-V

-I

0010111

Bias Voltage (V)

Capacitance (pF)

V-I Characteristics Capacitance and Bias Voltage

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – °C

Percent of V

Change – %

25 °C

25°C

Case Temperature (T

) - ºC

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140 160

Ratio of

= 25ºC)

Normalized V

Change vs. Junction Temperature

Normalized DC Holding Current vs. Case Temperature

Notes:

- Peak pulse current rating (I

) is repetitive and guaranteed for the life of the product.

- I

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- The device must initially be in thermal equilibrium with -40°C < T

<¡$

1 2 3 4

SIDACtor 1
Protection Thyristors 1

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